power vdc +24 +24 ma 425 450 max. rf amplifier model BXMP1003 characteristic typical min/max ta= 25 oc ta = 0 oc to +50 oc note: care should always be taken to effectively ground the case of each unit. noise figure (db) 3.7 4.0 max. vswr in <1.5:1 1.5:1 max. out <1.5:1 1.5:1 max. reverse isolation (db) -27 -26 min. power @ 1 db comp. (dbm) +32 +31 min. gain (db) 22 21.5 min./22.5 max. specifications typical performance data frequency (mhz) 5 - 35 mhz 5 - 35 mhz gain flatness (db) 0.5 0.5 min. ip2 (dbm) 93 90 min. ip3 (dbm) 49 47 min. ! ultra high ip2: +93 dbm typical ! high 3rd order intercept: +49 dbm typical ! high power 1 db comp.: +32 dbm typical maximum (no damage) ratings ambient operating temperature .............. -55oc to + 100 oc storage temperature ............................... -62oc to + 125 oc dc voltage ......................................................... + 26 volts continuous rf input power ................................. + 13 dbm short term rf input power .... 100 milliwatts (1 minute max.) maximum peak power ................... 0.1 watt (3 sec max.) features medium power amplifier package: sma connectorized housing typical intermodulation performance at 25 o c second order harmonic intercept point ...... +95 dbm (typ.) second order two tone intercept point...... +93 dbm (typ.) third order two tone intercept point........... +49 dbm (typ.) legend + 25 oc +50 oc - - - - - - 0 oc 01/12/05 spectrum microwave 2144 franklin drive n.e. palm bay, florida 32905 ph (888) 553-7531 fax (888) 553-7532 spectrum microwave (europe) 2707 black lake place philadelphia, pa. 19154 ph (215) 464-4000 fax (215) 464-4001 www.spectrummicrowave.com
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